vishay siliconix sud50p04-13l document number: 73009 s-71660-rev. b, 06-aug-07 www.vishay.com 1 new product p-channel 40-v (d-s) 175 c mosfet features ? trenchfet ? power mosfet ? 175 c junction temperature notes: a. surface mounted on 1" x 1" fr4 board. b. see soa curve for voltage derating. b. calculated based on maximum allowed junction te mperature. package limitation current is 50 a. product summary v ds (v) r ds(on) ( )i d (a) - 40 0.013 at v gs = - 10 v - 60 a 0.022 at v gs = - 4.5 v - 48 to-252 s gd top view drain connected to tab SUD50P04-13L-E3 (lead (pb)-free) ordering information: s g d p-channel mosfet absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 40 v gate-source voltage v gs 20 continuous drain current b t c = 25 c i d - 60 c t c = 100 c - 43 pulsed drain current i dm - 100 continuous source current (diode conduction) i s - 60 c avalanche current l = 0.1 mh i as - 40 avalanche energy, e as 80 mj maximum power dissipation b t c = 25 c p d 93.7 b w t a = 25 c 3 a operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 10 sec r thja 15 18 c/w steady state 40 50 maximum junction-to-case (drain) r thjc 1.3 1.8 rohs compliant
www.vishay.com 2 document number: 73009 s-71660-rev. b, 06-aug-07 vishay siliconix sud50p04-13l new product notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = - 250 a - 40 v gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.0 - 3.0 gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 40 v, v gs = 0 v - 1 a v ds = - 40 v, v gs = 0 v, t j = 125 c - 50 on-state drain current a i d(on) v ds = - 5 v, v gs = - 10 v - 50 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 30 a 0.0105 0.013 v gs = - 10 v, i d = - 30 a, t j = 125 c 0.020 v gs = - 4.5 v, i d = - 20 a 0.017 0.022 forward transconductance a g fs v ds = - 15 v, i d = - 30 a 15 s dynamic b input capacitance c iss v ds = - 25 v, v gs = 0 v, f = 1 mhz 3120 pf output capacitance c oss 440 reverse transfer capacitance c rss 320 gate resistance r g f = 1 mhz 4.3 total gate charge c q g v ds = - 20 v, v gs = - 10 v, i d = - 50 a 63 95 nc gate-source charge c q gs 13 gate-drain charge c q gd 16 tu r n - o n d e l ay t i m e c t d(on) v dd = - 20 v, r l = 0.4 i d ? - 50 a, v gen = - 10 v, r g = 2.5 15 25 ns rise time c t r 18 30 turn-off delay time c t d(off) 60 90 fall time c t f 47 70 drain-source body diode characteristics pulse current i sm - 100 forward voltage a v sd i f = - 50 a, v gs = 0 v - 1.0 - 1.5 v source-drain reverse recovery time t rr i f = - 50 a, di/dt = 100 a/s 36 55 ns
document number: 73009 s-71660-rev. b, 06-aug-07 www.vishay.com 3 vishay siliconix sud50p04-13l new product typical characteristics 25 c unless noted output characteristics transconductance capacitance 0 20 40 60 8 0 100 0246 8 10 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 3 v v gs = 10 thr u 5 v 4 v 2 v 0 10 20 30 40 50 60 70 8 0 0 1020304050 v gs - gate-to-so u rce v oltage ( v ) - transcond u ctance (s) g fs t c = - 55 c 25 c 125 c 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 8 16 24 32 40 v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c iss c oss c rss transfer characteristics on-resistance vs. drain current gate charge 0 20 40 60 8 0 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 25 c - 55 c t c = 125 c 0.00 0.01 0.02 0.03 0.04 0.05 0 204060 8 0100 - on-resistance ( ) i d - drain c u rrent (a) r ds(on) v gs = 10 v v gs = 4.5 v 0 2 4 6 8 10 0 8 16 24 32 40 4 8 56 64 - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds = 20 v i d = 50 a
www.vishay.com 4 document number: 73009 s-71660-rev. b, 06-aug-07 vishay siliconix sud50p04-13l new product typical characteristics 25 c unless noted thermal ratings on-resistance vs. junction temperature 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 175 t j - j u nction temperat u re (c) v gs = 10 v i d = 30 a r ds(on) ? on-resistance ( n ormalized) source-drain diode forward voltage v sd - s o u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 100 10 1 0.3 0.6 0.9 1.2 1.5 t j = 25 c t j = 150 c 0 maximum avalanche drain current vs. case temperature 0 15 30 45 60 75 0 25 50 75 100 125 150 175 t c - case temperat u re (c) - drain c u rrent (a) i d limited by package safe operating area t c = 25 c single p u lse v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 200 10 0.1 1 10 100 0.1 100 1 limited b y r ds(on) 1 ms 10 ms 100 ms dc 10 s 100 s normalized thermal transient im pedance, junction-to-ambient sq u a r e w a v e p u l se d u r at i o n (sec) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 10 n ormalized effecti v e transient thermal impedance 1 k 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 100 1
vishay siliconix sud50p04-13l document number: 73009 s-71660-rev. b, 06-aug-07 www.vishay.com 5 thermal ratings vishay siliconix maintains worldwide manufac turing capability. products ma y be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a composite of all qua lified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?73009 normalized thermal transient impedance, junction-to-case s q u are w a v e p u lse d u ration ( sec ) 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 10 n ormalized effecti v e transient thermal impedance 1 00 0.2 0.1 d u ty cycle = 0.5 1 0.05 0.02 single p u lse 2
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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